| PART |
Description |
Maker |
| 48SD3208RPFE 48SD3208RPFH 48SD3208RPFK |
CAP 1.5UF 50V CERAMIC MONO 20% 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
|
Maxwell Technologies, Inc
|
| K4M51163PC-RBC K4M51163PC-RBF1L K4M51163PC-RBF90 K |
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
TriQuint Semiconductor, Inc.
Jameco Electronics
Anpec Electronics, Corp.
SAMSUNG[Samsung semiconductor]
|
| N80 K4S511633CNBSP K4S511633C-YL_N80 K4S511633C K4 |
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
32Mx16 Mobile SDRAM 54CSP 1/CS 32Mx16移动SDRAM 54CSP 1/CS
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MC-4532CC727XFA-A75 MC-4532CC727XFA |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
|
| MC-4532CC726EF-A80 MC-4532CC726EF-A10 MC-4532CC726 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
32M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
ELPIDA MEMORY INC
|
| V54C3128404VCS6I |
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
|
PROMOS TECHNOLOGIES INC
|
| HYS72V32200GU-8B |
32M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
SIEMENS A G
|
| MC-4532CD647XFA-A75A |
32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
ELPIDA MEMORY INC
|
| V54C3128164VCLK75HPC V54C3128804VCLK75EPC V54C3128 |
8M X 16 SYNCHRONOUS DRAM, PBGA54
16M X 8 SYNCHRONOUS DRAM, PBGA54
32M X 4 SYNCHRONOUS DRAM, PBGA54
|
PROMOS TECHNOLOGIES INC
|
| EM6AB160TSA-5G EM6AB160TSA |
32M x 16 bit DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| AS4C32M16D1A AS4C32M16D1A-5TCN AS4C32M16D1A-5TIN A |
32M x 16 bit DDR Synchronous DRAM
Internal pipeline architecture
|
Alliance Semiconductor ...
|
